| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit which is resistive to electrostatic breakdown by separately arranging a protection diode connected to the input/output terminals and the internal circuit element connected to the same input/output terminals for the power supply line. CONSTITUTION:The internal circuit element 7 connected to the input/output terminals is arranged in the opposite side to a pad 2 for the power supply line 4a. Thereby, when an electrostatic pulse is applied to the pad 2, an energy is absorbed by the power supply line 4a from a diode 8 through a contact 6c. In this case, since there is no circuit element in the discharge path to the power supply line 4a from the diode 8, the gate does not show breakdown. |
