| 摘要 |
PURPOSE:To improve a yield of manufacture by omission of process by effecting a plasma treatment with using a carrier-to-carrier type crystal carrier. CONSTITUTION:Transfer of an Si wafer (it is contained in a carrier-to-cattier type Teflon carrier) of after etching of an SiO2 film to a crystal carrier and transfer of a wafer of after ashing of a resist to the carrier for a treatment of the next process are carried out at one time and the processing steps can be saved because the crystal carrier is carrier-to-carrier type. Furthermore, there is no need of using tweezers or vacuum tweezers so that the Si wafer is not demaged and a decline in yield is not caused. Also, as the crystal carrier is never deformed, such part that intervals among the positioned Si wafers of after etching of SiO2 films become narrow is not produced. Accordingly, ashing of the resist of the positioned Si wafer is all completed by a plasma ashing treatment of the predetermined time. |
