| 摘要 |
<p>A non-volatile storage cell having a floating conductive layer (11, 12, 13) which is coupled to an injector region (14) which is located in the semiconductor body (1) and, viewed on the surface (2), is entirely enclosed by a thick insulating layer, (6) said injector region (14) being connected to an electrode region (4) of the storage transistor by a semiconductor zone (16, 17) lying below said thick insulating layer (6). The injector region (14) is doped more weakly than the semiconductor zone (16, 17) and at least a part of the edge (18) of the semiconductor zone (16, 17) follows in a self-registered manner an edge (7) of the thick insulating layer (6). Furthermore, the floating conductive layer (11, 12, 13) is located for at least half its size on the thick insulating layer (6).</p> |
