发明名称 NORMAL PRESSURE CHEMICAL VAPOR DEPOSITION DEVICE
摘要 PURPOSE:To increase a yield by preventing the reaction products adhering to a duct cover from being detached and adhering to a wafer by providing heating machanism for the duct cover. CONSTITUTION:The heater 11 for increasing the surface temperature of he duct cover covering a dispersion head 5 and for preventing reaction products 8 adhering to the duct cover 4 from being detached is arranged around the duct cover 4. A tray 2 on which a wafer 3 is put is sent under the dispersion head 5 which sprays a reactive gas onto the upper surface of the wafet 3 which has been heated, thereby forming a CVD film. Unreacted gas in part is drawn into the duct cover 4 and enters into a reaction with the air sent from the outside to produce the reaction products 8 adhering to the internal surface of the duct cover 4. As the surface temperature of the duct cover 4 is high, the reaction products 8 become a thick film and are not detached.
申请公布号 JPS6120317(A) 申请公布日期 1986.01.29
申请号 JP19840141806 申请日期 1984.07.09
申请人 NIPPON DENKI KK 发明人 KANOU TSUNEO
分类号 H01L21/205;C23C16/44;H01L21/31 主分类号 H01L21/205
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