| 摘要 |
PURPOSE:To improve the tightness of contact of a nitride layer by forming an electrode by forming a conductor layer consisting of nitride as high melting point metal on a main surface of a semiconductor substrate of column III-V and laminating a conductor layer whose uppermost layer is made of good-conductive metal after a heat treatment. CONSTITUTION:On a main surface of a semiconductor substrate 1 of column III- Vsuch as GaAs, a WN layer 11 as a first conductor layer consisting of nitride as high-melting point metal is formed under the condition that the substrate is cooled by water or it is not subjected to heating particularly. After that, a heat treatment at high temperature, 400-600 deg.C in an inert atmosphere is made and the second conductor layer 12 in which at least the uppermost layer consists of good conductive metal is laminated on the first conductor layer. WN layer 11 to form an electrode. The tightness of contact between the substrate 1 and the WN layer 11 is enhanced and detachment of a gate electrode during the manufacturing processes, especially in activating annealing of ion-implanted atoms is completely prevented so that no defective become recognized in the electrode including an Au layer. |
