发明名称 PATTERN FORMING PROCESS
摘要 PURPOSE:To prevent any exposure and development from being interrupted by an intermediate mixed layer as well as any scum from being produced by said layer by a method wherein an upper layer resist film once formed is vacuum- drying processed subject to no heating process at all. CONSTITUTION:An insulating film 2 is partially formed on the surface of substrate 1 and then an A film 3 is formed on overall surface of the substrate 1. Later a lower layer resist film 4 is formed on the surface of film 3. Firstly an upper layer resist film 5 is formed on the surface of film 4. Thus another resist film 6 comprising the films 4, 5 is formed. Besides, an intermediate mixed layer 7 is formed between the film 4 and 5 but the thickness of this layer 7 may be made negligible. Secondly the substrate 1 is put in a vacuum chamber to volatilize solvent contained in the film 5 by means of vacuum-drying process subject to no heating process at all. The layer 7 may not be thickened due to said procedures. Later the film 5 is exposed and developed before exposing and developing the film 4. Through these procedures, the film 6 may be finely formed into specified shape.
申请公布号 JPS6119128(A) 申请公布日期 1986.01.28
申请号 JP19840139442 申请日期 1984.07.05
申请人 SONY KK 发明人 WATANABE KATSURA;TSUMORI TOSHIROU
分类号 G03F7/20;G03F7/26;H01L21/027 主分类号 G03F7/20
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