Method for revealing semiconductor surface damage using surface photovoltage (SPV) measurements

摘要

The presence of crystallographic damage in a semiconductor surface region is determined by surface photovoltage (SPV) measurements. Deviations from the idealized straight line SPV plot of photon flux (Io) versus reciprocal absorption coefficient ( alpha -1) in upward-facing concave form are used as a criterion of surface quality. This criterion is used to determine the minimum etching required to remove the damaged surface.