Utilizing interdiffusion of sequentially deposited links of HgTe and CdTe

摘要

A layer of CdxHg1-xTe is grown on a substrate by growing layers of HgTe t1 thick, and CdTe t2 thick alternately. The thicknesses t1 and t2 combined are less than 0.5 mu m so that interdiffusion occurs during growth to give a single layer of CdxHg1-xTe. The HgTe layers are grown by flowing a Te alkyl into a vessel containing the substrate and filled with an Hg atmosphere by an Hg bath. The CdTe layers are grown by flowing of Cd alkyl into the vessel where it combines preferentially with the Te on the substrate. Varying the ratio of t1 to t2 varies the value of x. Dopants such as alkyls or hydrides of Al, Ga, As and P, or Si, Ge, As and P respectively may be introduced to dope the growing layer.