发明名称 |
Sezawa surface-acoustic-wave device using ZnO(0001)/SiO2/ Si(100)(011) |
摘要 |
A surface acoustic wave device comprises a silicon substrate, a silicon dioxide layer provided on the silicon substrate, a zinc oxide layer provided on the silicon dioxide layer and input and output electrodes provided on the zinc oxide layer. The silicon substrate is cut by a crystalline surface substantially equivalent to the (100)- or (110)-surface, and the zinc oxide layer is such that its crystalline surface substantially equivalent to the (0001)-surface is parallel to the cut-surface of the silicon substrate, so that a surface acoustic wave entered from the input electrode is propagated to the output electrode in a direction substantially equivalent to the [011]- or [001]-axis of the silicon substrate.
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申请公布号 |
US4567392(A) |
申请公布日期 |
1986.01.28 |
申请号 |
US19840677712 |
申请日期 |
1984.12.04 |
申请人 |
CLARION CO., LTD. |
发明人 |
ASAI, RYUICHI;OKAMOTO, TAKESHI;MINAGAWA, SHOICHI |
分类号 |
H03H9/02;H03H9/05;H03H9/145;(IPC1-7):H01L41/08 |
主分类号 |
H03H9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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