MANUFACTURE OF CHIP OF SEMICONDUCTOR LASER

摘要

PURPOSE:To extract high-output laser beams by applying cleavage, shredding, the coating of anti-oxidizing film and isolation in a series at a wafer unit by using an adhesive tape and coating one of facing cleavage planes with a single layer and the other with double layers. CONSTITUTION:An Al foil is affixed onto a wafer 1 coated with an alkali-soluble positive resist, and the wafer is sucked to a movable base 3 and the surface is scarred 7a at pitches 2L (L represents oscillator length) by a needle 6. A scarred surface is exposed, the wafer is stuck onto a vinyl chloride sheet 8, passed through rollers and wound on a jig, and cleavage planes S1 are opened. The jig is introduced into a low- temperature CVD device, and the wafer is coated with Si3N4 15a. Scars 7b are formed at pitches L, and the wafer is cloven and divided into small pieces 11b. When the wafer is coated with Si3N4 15b again and both films 15a, 15b take the size of 1/4n (n represents the refractive index of Si3N4) of a laser wavelength, the single layer side is used as a non-reflection film and the double layer side as a reflection film. A small piece 11b group is shredded by scars 18 at regular pitches, the adhesive sheet 8 is extended, the wafer is split, and the resist 14 is removed through melting by an alkali liquid, thus obtaining laser chips. Laser beams can be extracted efficiently from the cleavage plane of the non-reflection film in the chip.