发明名称 MASK FORMING PROCESS
摘要 PURPOSE:To form a work with high precision inflicting no thermal loss on the work at all by a method wherein a positive type resist layer is formed on the surface of work through the intermediary of an acrylic resist layer, a fluoride thin layer and an alcohol impregnated thin layer. CONSTITUTION:An acrylic resist layer 3 is formed on the surface of a work 1. Firstly a thin layer 41 comprising fluoride i.e. the same material as that of layer 3 is formed on the surface side of layer 3. Secondly an alcohol-impregnated thin film 42 is formed on the surface side of layer 41. Thirdly a positive type photoresist layer 4 is formed on the layer 42 by means of coating and baking positive type resist material and then another layer 44 comprising mixed materials of layers 3, 41 and 4 is formed substituting for the layers 41, 42 between the layers 3 and 4 to make the layers 3, 44 form a laminated body 45. Fourthly a resist layer 8 is formed by means of specifically patterning the layer 4. Finally another laminated body 50 is formed by means of ion-etching process utilizing the layer 8 as a mask. Through these procedures, a mask may be formed of the laminated body 50 with high precision and excellent reproducibility.
申请公布号 JPS6119127(A) 申请公布日期 1986.01.28
申请号 JP19840139375 申请日期 1984.07.05
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 MIMURA YOSHIAKI;NAKANO JIYUNICHI;UEKI MINEO;ODAKA ISAMU
分类号 G03F7/26;G03F7/11;G03F7/20;H01L21/027;H01L21/033;H01L21/30 主分类号 G03F7/26
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