| 摘要 |
PURPOSE:To obtain an element isolation region, in an isolation end section thereof there is no crystal defect, through a simple process by forming an oxide film on the surface, boring an opening section, introducing an impurity having the same conduction type as a semiconductor substrate and oxygen through an ion implantation method and oxidizing the substrate when the element isolation region is shaped to the substrate. CONSTITUTION:A P type Si substrate 1 is thermally treated to form a thermal oxide film 2 on the surface, a pattern for a photo-resist 3 with a predetermined opening is shaped on the thermal oxide film 2, and an opening section 4 corresponding to the opening is formed to the film 2 through etching. Boron and oxygen in high concentration are implanted into the opening section 4 through an ion implantation method to shape an element isolation region 5. The energy of ion implantation is controlled at that time, and the peak depth of concentration is selected at an optimum value determined by the quantity of oxidation in a post-process. The resist 3 is removed, a novel resist 6 is applied, the region 5 is left only at a position corresponding to the opening section 4 through dry etching, others are removed and the surface is flattened. Accordingly, the intrusion of ions in the lateral direction is eliminated, and the titled semiconductor device is fitted to an integrated circuit. |
