| 摘要 |
PURPOSE:To improve the corrosion resistance of a bonding wire by applying pure aluminium thinly on the surface of an aluminium alloy containing a transition element as a core with a thickness of 4-20% for a cross section ratio. CONSTITUTION:An bonding wire 3 with a diameter of 0.03mm. is constructed by applying 10%, for example, for a cross section ratio a pure aluminium layer 2 on the surface of Al-1% Co alloy as a core 1. When the bonding wire of such a compound structure is applied to an IC, the resistance exists both in a general air and in resin sealing. in a general air it becomes easy to produce and maintain products with an existence of the pure aluminium, and in resin sealing it effects maintenance of a performance and reliability of a semiconductor device with an existence of an aluminium alloy containing a transition element. |
