| 摘要 |
PURPOSE:To enable larger electric current to be taken out, by connecting a collector electrode to a collector region between a collector contact region and a base region, and to the collector contact region. CONSTITUTION:Since there is a potential gradient between a collector contact 13 and a base region 12, an epitaxial region has the highest potential on the collector contact side while the potential decrease toward the base region 12. If a contact hole 16 is provided close to the base region 12, less collector current is sufficient to cause a Schottky barrier diode to conduct. When a part of the current injected into the collector region of an output transistor 6 through the Schottky barrier diode flows into the base regions, the base current is added to the electric current value of an electric current source 5, whereby still larger output current is enabled to be conducted. Thus, the output current in a logic circuit can be increased without increasing the power consumption or using any special process. |
