| 摘要 |
PURPOSE:To form self-registeredly both channels by forming a gate electrode in a groove to a substrate with beforehand stacking and forming active layers for the source and the drain of both channels in an element region forming CMOS inverter. CONSTITUTION:An N-channel MOSFET of an lower layer consists of a gate channel of a substrate 10, a gate insulating film of the second insulating film 16, the gate of an electric conductor 17 and the source, drain of the first active layer 12. A P-channel MOSFET of an upper layer consists of a gate channel of the third active layer 19, the gate insulating film of the third insulating film 18, the gate of an electric conductor 17 and the source, drain of the second active layer 14. The N and P channel MOSFET can be formed self-registeredly through forming an electric conductor 17 as an embedded gate and a groove 15 in both 12 and 14 of the first active layer and the second active layer. |
