| 摘要 |
PURPOSE:To realize excellent bonding through reduction and purification of the lead surface by conducting wire bonding to a lead frame to which semiconductor elements are attached after said lead frame is caused to pass through the mixed gas ambient of a high temperature inactive gas and reduction gas. CONSTITUTION:Temperature of a high temperature part 100 and bonding 200 is controlled in the different manners and the entire part of heating portion is covered with a gas cover 9. The mixed gas ambient can be maintained by supplying the gas where the reduction gas (H2, etc.) of about 10% is mixed to inactive gas (N2, Ar, etc.) from the exhaustion port 10 into this gas cover 9. The high temperature part 100 is capable of almost perfectly reducing an oxide film at the lead surface in said mixed gas ambient by controlling temperature in the ange of 350-450 deg.C. At the bonding part, a perture is provided to the gas cover 9, simultaneously the lead frame holding plate 8 is provided for facilitating the bonding work. Moreover, temperature of bonding part must be loweed as much as possible so that the reduced lead surface is not oxidizing again. |
