| 摘要 |
PURPOSE:To prevent generation of hillock at the wirings of aluminum or aluminum alloy by forming an obstruction film which obstructs grain boundary shift of aluminum atom at the upper and side surfaces of wirings. CONSTITUTION:After forming an insulation film 10 on a semiconductor substrate 11, a conductive layer 9 consisting of aluminum or aluminum alloy is formed. Therefter, a titanium silicide film 8 is formed by the sputtering method. Next, these conductive layers 9 and titanium silicide film 8 are etched in accordance with specified wiring patterns in order to form the wirings. Next, the titanium silicide film 12 is formed again on the entire surface of semiconductor device. The titanium silicide film 12 is etched by the RIE anisotripic etching and thereby the titanium silicide film 13 remains at the upper and side surfaces of the wiring 9. |
