| 摘要 |
PURPOSE:To electrically evaluate the accuracy of alignment up to such a range as is difficult to judge with visual check by providing displacement areas to the gates of upper and lower layers and determining accuracy in alignment of patterns on the basis of the resistance values of diffused layers with such gates used as the masks. CONSTITUTION:The pattern 11 of 1st layer and the pattern 12 of 2nd layer of the mask pattern 10 specifying a field insulation film are respectively provided with the positions P which are little deviated by about several mum to each other. The N<+> type diffused layer 13 is formed to the shaded area by ion implantion to form the source and drain. A resistance value of diffused layer 13 can be measured by providing two aluminum terminals 14, 15 in both sides of position P. A resistance value of diffused layer 13 is largely depending on isolation between the patterns 11, 12 at the position P. Therefore, alignment accuracy of patterns 11, 12, namely jointing accuracy at the gates of first layer and second layer can be checked by monitoring such resistance value. |
