| 摘要 |
PURPOSE:To realize ultra-miniaturized pattern and improve pattern accuracy by executing wet etching using an etching mask consisting of inorganic material which is not etched with an etchant for etching a film to be etched. CONSTITUTION:A silicon nitride film 13 which is a wet etching mask film is formed on the surface of SiO2 film 12 which is formed on the main surface of Si substrate 1 for the etching. Next, an aperture 13a corresponding to the specified pattern is formed to the Si3N4 film 13 through scanning and irradiation of reactive ion beam. Next, when the wet etching using reduced fluoric acid which is capable of etching SiO2 film without etching Si3N4 film 13 is carried out to SiO2 film 12 with the Si3N4 film 13 forming an apertue 13a used as the mask, an aperture 12a having a pattern corresponding to the pattern of aperture 13a is formed to SiO2 film 12. |
