CIRCUITO FET UTILIZZANTE LA TENSIONE DI SUBSTRATO PER DISATTIVARE DISPOSITIVI OPERANTI NEL REGIME A SVUOTAMENTO,申请号IT19770031119-传众专利搜索

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发明名称	CIRCUITO FET UTILIZZANTE LA TENSIONE DI SUBSTRATO PER DISATTIVARE DISPOSITIVI OPERANTI NEL REGIME A SVUOTAMENTO
摘要
申请公布号	IT1114184(B)	申请公布日期	1986.01.27
申请号	IT19770031119	申请日期	1977.12.22
申请人	IBM CORP	发明人
分类号	H03K19/017;H03K19/0185;H03K19/0944;(IPC1-7):H01L/	主分类号	H03K19/017
代理机构		代理人
主权项
地址

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