| 摘要 |
PURPOSE:A plurality of platelets to be treated are arranged in the direction of the stream of reaction gases and temeprature gradients are caused to change the diection of gas stream during the treatment to form gas-phase treated plateles with good distribution of the layer thickness and sluctuation layer thickness. CONSTITUTION:A plurality of platelets to be treated 3 such as Si angle crystal wafers are placed on a susceptor 2, switch valves 6, 7 are opened and the valves 8, 9 are closed. Then, a H2 gas is allowed to flow from inlet 5 into the tube 1, and simultaneously the susceptor 2 is heated at 400-1,200 deg.C with a heater having coils which are wound roughly on both ends and densely on the center part of the susceptor 2 and the temperature is set on both end to temperatures lower than the center. H2 gas including SiH2Cl2 is introduced to effect vapor-phase growth of Si on the platelets 3. Several seconds or several minutes after then, valves 6, 7 are closed, valves 8, 9 are opened to change the flow of the reaction gases. The operations are repeated to effect epitaxial growth. |
