发明名称 BIAS CIRCUIT
摘要 PURPOSE:To obtain a bias circuit that can increase the input impedance of a transistor with no use of a high resistance, by combining two transistors different in polarity. CONSTITUTION:The base of a lateral PNP transistor TRQ2 is connected to the base of an NPN TRQ1, and the bias voltage is supplied to the emitter of the TRQ2 via a resistance R and a power supply V1. In such a constitution, it is possible to form a bias circuit having >=50KOMEGA input impedance just with a resistance R of about 1KOMEGA and a lateral PNP TR. Furthermore the stable base voltage of the TRQ1 can be secured with use of a lateral TR. The same effect is also secured even in case the polarities of both transistors are reversed to each other.
申请公布号 JPS6118019(A) 申请公布日期 1986.01.25
申请号 JP19840138798 申请日期 1984.07.04
申请人 TOSHIBA KK 发明人 HASHIMOTO MASARU
分类号 H03F1/30;G05F3/22 主分类号 H03F1/30
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