| 摘要 |
PURPOSE:A single crystal film of aluminum nitride and an alumina film are formed in order on a sapphire base, further silicon carbide is allowed to grow on it whereby a single crystal film of silicon carbide with good crystalline properties and electrical properties is formed with high adhesion. CONSTITUTION:In a vacuum tank 1, A1 molecular beam from its vapor source 6 and NH3 from pipe 5 are jetted to the sapphire base 3 heated at about 1,000- 1,200 deg.C to form an aluminum nitride single crystal film. Then, (ii) NH3 is stopped, O2 is introduced to form an alumina layer on the single crystal film. (iii) A1 molecular beam and O2 are stopped and the base is kept at about 1,000 deg.C in vacuum for 60min, then, the base is kept at about 1,200 deg.C and Si molecular beam from the vapor source 7 and acetylene from pipe 5 are introduced to form the single crystal film of silicon carbide on the oxilized layer. |
