| 摘要 |
PURPOSE:To reduce a distance between a polysilicon layer as a gate electrode and a contact hole in a diffusion region up to an approximately negligible extent, and to obtain a MOSIC having the high degree of integration by forming the contact hole in the diffusion region in a self-alignment manner. CONSTITUTION:A polysilicon layer 16, an oxide film 18 and a nitride film 20 are shaped onto a gate oxide film 12, and etched so as to leave a gate electrode and a wiring region, and an impurity is implanted to a substrate 10. A nitride film 42 is deposited, and etched so that the nitride film is left on the upper surface and side surface of a polysilicon layer pattern, and the impurity is implanted to the substrate 10 in regions as a source and a drain. A inter-layer insulating film 52 is deposited, and contact holes 64, 66 on a diffusion region and a contact hole 68 on a wiring are formed through etching. The contact holes 64, 66 are shaped in a self-alignment manner while using nitride films 44, 45 on the side surface of a age polysilicon layer 26 as one part of a mask at that time. Metallic-layer patterns 72, 74, 76 are formed. |
