发明名称 DRIVING CIRCUIT FOR FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To prevent the 1st and the 2nd switch from turning on simultaneously and an overcurrent from flowing to the 1st and the 2nd switches by turning off the 1st switch of the driving circuit for field effect transistors (MOSFET) forcibly when the 2nd switch turns on. CONSTITUTION:When a MOSFET8 of the 1st switch turns on, the gate capacity 16 of a MOSFET14 is charged with pulses generated at the 3rd winding n13 to turn on the MOSFET14, and when a MOSFET9 as the 2nd switch connected in series with the 2nd winding n12 turns on, the gate capacity 16 is discharged with an opposite-polarity generated at the 3rd winding n12 to turn off the MOSFET14. This driving circuit for MOSFETs turns off the 1st switch when the 2nd switch turns on when the 1st switch is on, and consequently, the winding inductance of a current transformer never decreases to zero even when an input signal decreases in pulse width to zero, so that an overcurrent flows to either the MOSFET9 nor the MOSFET9.
申请公布号 JPS6116619(A) 申请公布日期 1986.01.24
申请号 JP19840137451 申请日期 1984.07.02
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 FUKUHARA YOSHIHIKO;TSUKAMOTO KAZUO
分类号 H03K17/04;H03K17/687;H03K17/691 主分类号 H03K17/04
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