| 摘要 |
PURPOSE:To prevent the mixing of noises even when one end of a capacitor is connected at a node having high impedance by forming a first capacitor using a first conductor layer and a second conductor layer as opposite electrodes and a second capacitor employing the second conductor layer and a third conductor layer as opposite electrodes. CONSTITUTION:A field oxide film 2 is formed onto a P type silicon substrate 1, a first electrode 13, a dielectric layer 16, a second electrode 14 and further a dielectric layer 17 and a third electrode 15 are shaped onto the field oxide film 2, and the electrodes 13, 15 are connected by a wiring 7. A protective film 6 and a wiring 8 are formed and a terminal 10 and a terminal 11 are fitted. Consequently, a capacitor using the electrode 14 and the electrode 13 as opposite electrodes and a capacitor employing the electrode 14 and the electrode 15 as opposite electrodes are obtained. Since the electrode 14 is shielded by the electrode 13, 15, the variation of the potential of a wiring 9 is not transmitted over the electrode 14. Likewise, the variation of the potential of the substrate 1 is not also transmitted over the electrode 14 because the electrode 13 functions as a shield. Accordingly, noises are not mixed even when the terminal 11 to which the electrode 14 is connected has high impedance. |
