| 摘要 |
PURPOSE:To control dispersion in a manufacturing process and to improve reproducibility by a method wherein a silicon film serves as a stopper and spacer in a etching process when an insulating film buried in a groove is subjected to etchback for the completion of an isolating groove. CONSTITUTION:On top of a semiconductor substrate 1, an oxide film 2 and then a silicon layer 4 is formed. An element-forming region is covered by a photoresist 6, which serves as mask in an etching process wherein a groove 5 for isolating elements is formed in the semiconductor substrate 1. A process follows wherein the photoresist 6 is removed before the groove 5 and the surface of the silicon layer 4 are subjected to thermal oxidation. Then, an insulating film 8 is deposited in the groove 5 and on the surface of the substrate 1, and reflow is accomplished. Etchback is performed by the reactive ion etching technique until the silicon layer 4 comes out. After this, the silicon layer 4 remaining on the surface of the substrate 1 is removed and the surface of the insulating film 8 buried in the groove is subjected to reflow, for the completion of an isolating- groove structure. |
