| 摘要 |
PURPOSE:To determine the widths of a pattern including several layers or a buried layer composed of materials different from that of a substrate by a method wherein the different materials are exposed to a scanning electron beam and the induced characteristic X-rays are detected. CONSTITUTION:When a specimen, wherein a platinum layer 9 and gold layer 10 are deposited on a GaAs wafer 7, is exposed to an electron beam, the characteristic X-rays induced during the scan are shaped as 11 for the gold and 12 for the platinum. The two shapes determine the widths 13 of the gold pattern and the width 14 of platinum pattern. The characteristic X-rays emitted by tungsten, in a specimen wherein a tungsten silicide 17 layer is deposited and then covered by an SiO2 film 18 on a silicon wafer 15, when it is exposed to an electron beam, is represented by 19, which determines the width 20 of the tungsten pattern. |
