| 摘要 |
PURPOSE:To diminish thermal effects by a method wherein the titled element is made of Au, Sn, and Cr. CONSTITUTION:A Cr 2 is laminated on a substrate 1 made of N type GaAs, and an Sn layer 3 and an Au layer 4 are successively laminated on this Cr layer 2. When the Au layer 4 and the Sn layer 3 are then alloyed at a temperature of 300-400 deg.C, the contact resistance can be kept about 5X10<-5>OMEGA.cm<2> less in the case of a Cr layer 2 thickness of more than 0Angstrom and less than 200Angstrom , and the resistance value becomes minimized with its thickness of 50-100Angstrom . This is to help Sn diffuse into the substrate 1 by extinguishing the spontaneous oxide film formed on the surface of the substrate 1 in the presence of the Cr layer 2. This manner yields sufficient ohmic contacts even at an alloying temperature of 350 deg.C or less and thus can diminish thermal effects on the semiconductor element. |
