摘要 |
PURPOSE:To prevent lifetime decrease by relaxing the heat shock to a substrate by a method wherein the temperature of rinsing water is varied to reduce the difference in temperature between the plating work in the process of electroless Ni plating and the rinsing work before and after the plating work. CONSTITUTION:An anisotropic etching surface 102 is formed by etching a p type single crystal Si substrate 101, and an n<+> layer 103 is formed by phosphorus diffusion after rinsing; then, aluminum paste 104 is formed over the back. After drying, a p<+> layer 105, an alloy layer, is formed by short-time calcination, and a plating resist 106 is formed by screening printing. Rinsing is carried out at 20 deg.C, 40 deg.C, and 60 deg.C after etching, and Ni-plated layers 107 are formed on both surfaces by electroless Ni plating at 85 deg.C. After further rinsing at 60 deg.C, 40 deg.C, and 20 deg.C, the plating resist 106 is removed, and solder layers 108 are formed and connected with leads 109. |