发明名称
摘要 PURPOSE:To decrease an area per one cell shared in a chip, by forming a block corresponding to >=2 storae means into two adjacent areas together. CONSTITUTION:One cell CL11 of two CMOS memory cells CL11 and CL12 forming a minimum unit is formed with a PMOS area 21, an NMOS area 22 and a PN boundary area 23 between both the areas. The other cell CL12 is formed with a PMOS area 31 adjacent to the area 21 and an NMOS area adjacent to the area 22, and a large area PMOS area 41 and a large area NMOS area 42 are formed with the areas 21 and 31 and the areas 22 and 32. Thus, the area per cell shared in a chip can be decreased in comparison with the provision of a PN boundary area at each memory cell.
申请公布号 JPS612301(B2) 申请公布日期 1986.01.23
申请号 JP19810030214 申请日期 1981.03.03
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 MASUDA MASAMI;OCHII KYOBUMI;KONDO TAKEO
分类号 G11C11/412;G11C11/411;H01L21/822;H01L21/8238;H01L21/8244;H01L27/04;H01L27/092;H01L27/10;H01L27/11;H01L29/78 主分类号 G11C11/412
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