| 摘要 |
PURPOSE:To enable the wiring material of aluminum series to be sputtered while being heated to high temperature by a method wherein a layer of high melting point metal is formed on an intermediate insulation film prior to the deposition of the wiring material of aluminum series on the intermediate insulation film. CONSTITUTION:After a field oxide film 12, a gate oxide film 13, a gate electrode 14, and a source-drain diffused layer 15 are formed on a semiconductor substrate 11, the intermediate insulation film 16 of phosphorus glass or the like is formed on the substrate 11, and a tungsten layer 17 is formed on the film 16 thinly as the layer of high melting point metal after glass flow. Next, contact holes 18 are formed on the electrode 14 and the layer 15; thereafter, an aluminum series metal is sputtered, while being heated to high temperature, as the wiring material of aluminum series on the layer 17 including the holes 18. Then, aluminum series wirings 19 are formed on the holes 18 and the layer 17 by patterning the aluminum series metal, and the layer 17 part exposed by patterning is removed. |
