发明名称 PHOTORESIST MATERIAL AND PATTERN FORMING METHOD USING MATERIAL THEREOF
摘要 PURPOSE: To easily convert a positive pattern to a negative pattern by specifying the composition of an organosilane compound of a photoresist material to change the temp. and the firing time. CONSTITUTION: The photoresist material is a reaction product of 2-methyl resorcin with a reaction product of a novolak resin having a phenol group with the organosilane compound. Concretely, the organosilane compound is expressed by a formula and the photoresist material is capable of forming a positive pattern and a negative pattern corresponding to heating time and the temp. In the formula, A is selected from a group composed of methyl group and phenyl group and X represents a halogen. The silane compound to be used for the photosensitive material included in this invention is methyl phenyl dichlorosilane and the same kind of silanes is regarded also to be included in this invention.
申请公布号 JPH0683065(A) 申请公布日期 1994.03.25
申请号 JP19930010284 申请日期 1993.01.25
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 PIITAA ANSONII AGOSUTEIINO;ADORUFU HAABUSUTO;FUREDERITSUKU MAABUIN PURESUMAN
分类号 G03F7/038;G03F7/039;G03F7/075;H01L21/027;(IPC1-7):G03F7/075 主分类号 G03F7/038
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