| 摘要 |
PURPOSE:To inhibit cracks and the like of a PSG by a method wherein a wiring layer is split into a plurality of N current paths of the same length parallel at the connection part, and the width of the current path is set at the 1/N of the case of non-split wiring layer. CONSTITUTION:An impurity diffused region 12 and a field insulation film 14 made of SiO2 or the like are formed on the surface of a semiconductor substrate 10. After a contact hole to the region 12 is provided in the film 4, Al is adhered and the first wiring layer 16 having five parallel current paths 16a-16e is formed by patterning this Al film. Besides, the width of these current paths 16a-16e is: a width = Ws/5 when a wiring width of Ws is necessary as a single wiring layer, and connection parts C1 and C2 are connected to each other with five current paths 16a-16e having the same length L. |
