| 摘要 |
PURPOSE:To form multilayer thin films of high performance at low cost by short processes by adopting the process of many times of coatings with a solution for thin film and the process of heat treatment after the final coating. CONSTITUTION:An n<+> conductive region 12 and an n<+>p photovoltaic junction surface 13 are formed by thermal diffusion of phosphorus as the impurity to a p type Si single crystal substrate 11. A lattice front electrode 14 is formed on the front of this region 12, and a back electrode 15 on the back of the substrate 11. A multilayer reflection-preventing film 16 is formed at the center of the surface of the region 12 in the form of multilayer thin film. The multilayer reflection-preventing film 16 is producedf by coating the surface of the region 12 with the solution for forming a Ti dioxide thin film, and by rotating a spinner that secures the substrate 11. Next, as the second layer, the solution for forming and an Al oxide thin film is applied and spinned. Finally, a double-layer reflection film is formed by calcination at 500 deg.C for 30min. |
