| 摘要 |
PURPOSE:To obtain the structure of element isolation in self-alignment by a method wherein a thin film having the characteristic of Si etching resistance is formed on the region outside the field region and on the field region at a required distance from the above-mentioned region, then being made as a mask for groove etching. CONSTITUTION:After an Si oxide film 2, an Si nitride film 3, and an Si oxide film 5 having the characteristic of Si etching resistance, and a resist 6 are formed on an Si substrate 1, an Si oxide film 7 is formed by etching the film 5. Thereafter, after deposition of aluminum films 8 and 9 having the characteristic of Si etching resistance, grooves 14 are formed under the regions of the films 9 and 7 by leaving Si nitride films 10, 12 and Si oxide films 11, 13. Next, the films 9, 10, and 11 are removed, and after formation of an Si oxide film 16 in the grooves 14 and the field region 15, a polycrystalline film 17 is formed in the air gap of the groove 14, and an Si oxide film 18 on the film 17; then, the films 12 and 13 are removed, thus obtaining an element region 9. |
