| 摘要 |
PURPOSE:To enable an arbitrary sized mesa to be formed by a method wherein a photoresist film is coated within extent not exceeding an outside gentle slope of a frame-shape striped photoresist film and the mesa is formed by means of ion beam etching. CONSTITUTION:A frame-shape stripped photoresist film 2 is formed on a GaAs substrate 1. Next, heat-treatment is performed. Thereafter, a photoresist film 3 is formed within extent not exceeding an outside gentle slope of the frame- shpape striped photoresist film 2. This photoresist film 3 is realized easily by means that the photoresist film is formed over whole surface and thereafter, patterning thereof is performed. After that, slight heat-treatment is performed. This heat-treatment may be to an extent to dry the photoresist film 3. Next, mesa etching is formed by applying ion beam etching. In this manner, the mesa whose titled angle theta is about 20 deg. is formed. Thereafter,the photoresist film 2 and 3 are removed wholly by dissolving. |
