| 摘要 |
PURPOSE:To grow a good-quality epitaxial crystal having uniformity throughout a large area with a simple structure by spouting a gaseous material radially and spirally from a specified introducing port into the reaction chamber of a vertical gaseous phase growth device for thermally decomposing an organometal. CONSTITUTION:A gaseous material is spouted from the introducing port 21 of a gaseous material introducing pipe 22 whose spouting direction diverges from the rotational axis of symmetry and which is inclined downward into the reaction chamber of a vertical gaseous phase growth device for thermally decomposing an organometal to cross the reaction chamber wall 23, and a violent spiral flow 24 is generated in the reaction chamber. The freshness of the gaseous material at the upper part of the reaction chamber is kept, and the sharpness of changes in composition and impurity concn. is ensured. The material is uniformly supplied onto the surface 25 of a substrate. Consequently, an epitaxial crystal having excellent uniformity in composition and film thickness is grown with good controllability and reproducibility. |
