发明名称 RAW MATERIAL VESSEL USED IN GASEOUS PHASE GROWTH DEVICE FOR THERMALLY DECOMPOSING ORGANOMETAL
摘要 PURPOSE:To supply material vapor of a system to be supplied with a simple structure, stabilized pressure of the material, and good controllability by providing plural ruggedness to a part of the wall surface of a material vessel used in a gaseous phase growth device for thermally decomposing an organometal. CONSTITUTION:The vapor of a solid material is introduced through a valve 34 and a pipe 13 into a material vessel 32 having plural ruggedness at a part of the wall surface and used in a gaseous phase growth device for thermally decomposing an organometal, and deposited effectively and rapidly on the inner surface of a large area to form a uniform, minute, and comparatively thin layer 31 which is stored. By keeping the vessel 32 at a specified temp., the vapor pressure of the material in the vessel is always kept at a saturated vapor pressure which is determined by the wall surface temp. of the vessel. Consequently, the supply of the gaseous material is precisely controlled, and the gaseous material is sent to a system to be supplied.
申请公布号 JPS6114196(A) 申请公布日期 1986.01.22
申请号 JP19840133336 申请日期 1984.06.29
申请人 TOSHIBA KK 发明人 OOBA YASUO;YAMAMOTO MOTOYUKI;MUTOU YUUHEI
分类号 C30B25/14;H01L21/02 主分类号 C30B25/14
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