| 摘要 |
A masking process for semiconductor devices comprises the steps of:… - forming a first material film (3) on a semiconductor substrate (1);… - forming a second material film (4) on said first material film (3);… - selectively removing said second material film (4);… - exposing a structure thus formed to a gas plasma atmosphere to form a plasma polymerization film (5) on at least an exposed surface of said first material film (3);… - removing a remainder of said second material film (4);… and - removing the exposed surface of said first material film (3) by using said plasma polymerization film as a mask to form a first material film pattern (3). |
