| 摘要 |
PURPOSE:To prevent deterioration of property caused by abnormal diffusion by a method wherein a gallium-arsenic compound semiconductor substrate is contacted to an electric active region and an electronic trap region is formed at deeper portion than the electric active region. CONSTITUTION:An implantation mask 21 for forming a chennel region is formed on the surface of a semi-insulation property gallium-arsenic compound substrate 11. An aperture 22 is fomed on the mask where a channel is formed. Si, which is a doner impurity to form a channel active region, is implanted by ion implanting method into a portion of the mask aperture. After the implantation, the implantation mask 21 is removed, then Si is implanted by ion implanting method in order to form a high density active region of N-type impurity for a source and a drain. This device is heat-treated in nitrogen atmosphere and a channel region 12, an electronic trap region 13 and a high density active region 14 for the source and the drain are formed. After removing a protective film 31 for the heat-treatment of the formed device, a gate oxide 15 and gate electrode 16 is prepared on the channel active region 12. Thus a field effect transistor is formed. |
