发明名称 FORMATION OF ALLOY FILM
摘要 <p>PURPOSE:To form an alloy film having an approximately specified compsn. on an object to be treated by executing sputtering while changing the intensity of the magnetic field to be impressed to a target contg. different kinds of metals according to the depth of erosion or the factor associated thereto. CONSTITUTION:A magnetron sputtering device consists in disposing a stainless steel cylindrical cover 7 to the outside of concentrically disposed cylndrical coils 5, 6, disposed a mosaic target 3 arranged alternately with Mo plates 1 and Si plates 2 at a prescribed area ratio on the edge 7a at the end thereof, impressing a magnetic field to the surface of the target 3 from the above-mentioned coils 5, 6, executing sputtering under the influence of the magnetic field and forming the alloy film on a substrate 4 disposed to face the target 3. The intensity of said magnetic field with the above-mentioned sputtering device is changed by adjusting the current to be impressed to the coils 5, 6 according to the depth of the erosion of the target 3 or the factor such as the time for using the target associated to the depth of the erosion. The Mo-Si of the alloy film is thus maintained approximately at the uniform compsn.</p>
申请公布号 JPS6112863(A) 申请公布日期 1986.01.21
申请号 JP19840133939 申请日期 1984.06.28
申请人 TOSHIBA KK 发明人 YAMAZAKI TOSHINARI;UEDA MASAAKI
分类号 C23C14/14;C23C14/34;C23C14/35;C23C14/36;H01L21/28;H01L21/285;H01L21/44 主分类号 C23C14/14
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