| 摘要 |
PURPOSE:To remove the cloudiness and the irregularity of forward voltage on an electrode by a method wherein an electrode containing Si is vapor-deposited on the compound semiconductor crystal having P as a constituent element, an SiO2 film is coated thereon at the temperature lower than the alloying temperature, and the SiO2 film is removed after an alloying heat treatment is finished. CONSTITUTION:A Te-added n-layer 3 and Zn and O-added p-layer 2 are epitaxially formed on an n-GaP layer 4, an electrode 1 is vapor-deposited, AuSi 5 and Au 6 are selectively vapor-deposited after polishing, and an SiO2 film 7 is coated on the entire reverse side by performing a vacuum CVD method at 430 deg.C. Then, an alloying treatment of AuZi and GaP is performed in N2 at 500 deg.C, and the SiO2 film 7 is removed by etching using an HF solution. According to this constitution, the cloudiness generating after heat treatment can be prevented by the SiO2 film 7, and the forward voltage almost the same as the design can be obtained without irregularity. |
