A two-step analog-to-digital converter and BiCMOS fabrication method. The fabrication method provides pseudosubstrate isolation of digital CMOS devices from the analog devices. The converter uses NPN current switching in a flash analog-to-digital converter and in a digital-to-analog converter for low noise operation. CMOS digital error correction and BiCMOS output drivers provide high packing density plus large output load handling. Timing control aggregates switching events and puts them into intervals when noise sensitive operations are inactive. The fabrication method uses a thin epitaxial layer with limited thermal processing to provide NPN and PNP devices with large breakdown and Early voltages. Laser trimmed resistors provide small long term drift due to dopant stabilization in underlying BPSG and low hydrogen nitride passivation.
申请公布号
US5481129(A)
申请公布日期
1996.01.02
申请号
US19950391490
申请日期
1995.02.21
申请人
HARRIS CORPORATION
发明人
DEJONG, GLENN A.;BACRANIA, KANTILAL;CHURCH, MICHAEL D.;FISHER, GREGORY J.;GASNER, JOHN T.;ITO, AKIRA;JOHNSTON, JEFFREY M.;KUTCHMARICK, DAVE;RHEE, CHOONG-SUN