| 摘要 |
PURPOSE:To obtain a microscopic multilayer electrode of high reliability by a method wherein the flattened first electrode is provided with its side face contacting to the first insulating film and the upper face covered by the second insulating film, a window is selectively provided on the second insulating film, and the second electrode is superposed thereon. CONSTITUTION:A resist mask 14 is provided on the Si3N4 film 13 located on a GaAs substrate 14 having an n type active layer 12, and a window is provided by performing a reactive ion etching (RIE) method. Then, an AuGe/Ni film 15 is deposited by performing a sputtering method, an ohmic electrode 15 is buried, and subsequently an SiO2 film 16 of the same thickness as the Si3N4 film 13 is deposited by performing a sputtering method. The resist 14 is exfoliated, a resist mask 17 is provided on the flat surface, an etching is selectively performed on the SiO2 film using an NH4F liquid, and a hole to be used for self-matching is formed on the electrode 15. Then, Ti/Pt/Au is vapor-deposited continuously, and the second electrode 18 is superposed by performing a patterning. According to this constitution, the disconnection in stepped part of wirings is not generated, and it is unnecessary that a marginal area is provided on the ohmic electrode, thereby enabling to obtain a GaAs IC of high density. |
