发明名称 High voltage circuit for use in programming memory circuits (EEPROMs)
摘要 A high voltage circuit provides a high voltage signal output in response to receiving a logic signal. The high voltage circuit includes a regenerative circuit which is coupled to a high voltage terminal and a 5 volt power supply terminal. An inverting push-pull buffer responsive to the logic signal provides a signal which is regenerated to the high voltage by the regenerative circuit when the logic signal is in a first state and maintains the signal at ground potential when the logic signal is in a second logic state.
申请公布号 US4565932(A) 申请公布日期 1986.01.21
申请号 US19830566610 申请日期 1983.12.29
申请人 MOTOROLA, INC. 发明人 KUO, CLINTON C. K.;DEHGANPOUR, SAM
分类号 H03F3/345;H02M3/155;H03F3/34;H03K19/017;H03K19/0185;(IPC1-7):H03K17/10;G11C11/40;H03K3/027;H03K17/687 主分类号 H03F3/345
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