| 摘要 |
PURPOSE:To form a V type groove with sharp cross section by a method wherein a substrate of double hetero construction comprising InP and InGaPAs is successively etched with mixed solution of HCl and H3PO4 as well as with another mixed solution of K3Fe(CN6), HCl and H3PO4. CONSTITUTION:A p-InP 2, a p-InGaPAs 3, a p-InP 4 are laminated on a p<+>-InP substrate 1 and then the p-InP 4 is covered with an SiO2 film 5 to open a window 7. The InP 4 is etched with solution mixed with HCl and H3PO4 at a ratio of 3:1 and room temperature. Next a V type groove 10 with sharp section may be formed by means of etching 9 the InGaPAs 3 with mixed solution containing 4gr of K3Fe(CN)6, 6gr of KOH and 50gr of H2O at room temperature and then further etching 10 the InP 2 with another mixed solution of HCl and H3PO4 at room temperature to continuously form each conical groove. |
