| 摘要 |
PURPOSE:To maintain oscillation at a single wavelength even when an external temperature changes by forming two semiconductor laser sections shaped by dividing one resonator into two into the same chip. CONSTITUTION:A V groove 2 is formed onto the surface of an N-InP substrate 1 in the <01-1> direction. An N-InP first clad layer 3, a GaInAsP active layer 4, a P-InP second clad layer 5 and a P<+> GaInP ohmic-contact layer 6 are grown on the substrate 1 in a multilayer manner in succession. Consequently, the layer 3 grows only on the surface of the substrate 1 on the outside of the groove 2, the layer 4 grows in the groove 2 and on the whole surface on the layer 3, and the layer 5 and the layer 6 also grow on the whole surface. The wafer is mesa- etched until mesa etching reaches to the layer 3 from the layer 6 so that the stripe direction is directed in the <011> direction, thus obtaining stripe structure 7. Current stopping regions 8 are grown on the layers 3 on both sides of structure 7. According to the constitution, laser sections 11a, 11b uniformly expand or shrink by the change of an external temperature, thus maintaining oscillation at a single wavelength. |
