| 摘要 |
PURPOSE:To improve the dissolving speed of polymer as well as to reduce the deterioration in quality of image due to the interaction of a patterned part by a method wherein the thick polymer resist of the lower layer is quickly cooled after baking. CONSTITUTION:The first layer of resist 3 is coated on the surface of the film 2 to be processed on a substrate 1 in sufficient thickness with which the effect of stepping can be neglected. Subsequently, after said resist layer is baked at the prescribed temperature and period of time, it is cooled quickly to room temperature. Then, the second layer of resist 4 to be used for high resolution patterning is thinly coated on the resist 3. Subsequently, a baking is perfomed again on the second layer resist 4 under the designated baking conditions, and a resist film is completed. Then, the necessary part only is exposed 5 using a suitable light source for exposure, the second layer resist is developed, and after the desired pattern in vertical profile is obtained on the first layer, the first layer resist is developed. As a result, the solubility of the polymer resist is improved, and the range of selection of a developing solvent is made wider, thereby enabling to control the profile properly. |
