| 摘要 |
PURPOSE:To prevent a faulty bit from generating by making the disconnection of the electrodes hard to occure and to enable to improve the manufacturing yield of the titled photosensor by a method wherein the film thickness of the a-Si film is formed in such a way as to gradually become thinner as the film thickness goes away from the light-receiving part backward and forward along the auxiliary scanning direction. CONSTITUTION:Plural pieces of structures of one dot component, which consists of a pair of electrodes 7 and 8 distant at a prescribed interval, are arrayed on an insulative substrate 5 in one dimension in such a way that an a-Si film 10 is formed and a light- receiving part 10a is formed on the a-Si film 10. The film thickness of the a-Si film 10 in such an unmagnifying photosensor for image information readout is formed in such a way as to gradually become thinner as the film thickness goes away from the light- receiving part 10a backward and forward along the auxiliary scanning direction. Whereby as the a-Si film 10 has no edge part toward the electrodes, which are formed on the a-Si film 10, and its adhesive property is increased, the disconnection of the electrodes can be prevented, and at the same time, a state of good electrical contact can be secured. Accordingly, the generation of faulty bits is reduced, thereby enabling to improve the manufacturing yield of the equimultiply photosensor. |
